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| N Channel Enchancement Mode MOSFET 2.5A DESCRIPTION ST2304 The ST2304 is the N-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outine surface mount package. PIN CONFIGURATION SOT-23-3L 3 FEATURE 30V/2.5A, RDS(ON) = 70m-ohm @VGS = 10V 30V/2.0A, RDS(ON) = 105m-ohm @VGS = 4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design D G 1 1.Gate 2.Source S 2 3.Drain 3 S04YA 1 S: Subcontractor 2 Y: Year Code W: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 Page 1 N Channel Enchancement Mode MOSFET 2.5A ST2304 ABSOULTE MAXIMUM RATINGS (Ta = 25J Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150J ) TA=25J TA=70J Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction to Ambient TA=25J TA=70J Symbol VDSS VGSS ID IDM IS PD TJ TSTG Rc JA Typical 30 20 2.5 2.0 10 1.25 1.25 0.8 150 -55/150 100 Unit V V A A A W J J J /W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 Page2 N Channel Enchancement Mode MOSFET 2.5A ST2304 ELECTRICAL CHARACTERISTICS ( Ta = 25J Unless otherwise noted ) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Qg Qgs Qgd Ciss Coss Crss VDS=15V,VGS=4.5V IDY 2.5A VDS=10V,VGS=0V F=1MHz 4.5 0.8 1.0 240 110 17 8 12 17 8 10 nC Symbol V(BR)DSS VGS(th) IGSS Condition VGS=0V,ID=250uA VDS=VGS,ID=250uA VDS=0V,VGS=20V Min Typ Max Unit 30 1.0 3.0 V V 100 nA 1 10 6 4 uA A 0.055 0.07 [ 0.08 0.105 4.6 S 0.77 1.2 V VDS=30V,VGS=1.0V IDSS VDS=30V,VGS=0V TJ=55J ID(on) VDSU 4.5V,VGS=10V VDSU 4.5V,VGS=4.5V RDS(on) VGS=10V,ID=2.5A VGS=4.5V,ID=2.0A VDS=4.5V,ID=2.5V gfs VSD IS=-1.25A,VGS=0V pF 20 30 nS 35 20 td(on) tr td(off) tf VDD=15V,RL=15[ ID=1.0A,VGEN=10V RG=6[ STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 Page3 N Channel Enchancement Mode MOSFET 2.5A SOT-23-3L PACKAGE OUTLINE ST2304 STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 Page4 N Channel Enchancement Mode MOSFET 2.5A ST2304 TYPICAL CHARACTERICTICS (25J Unless noted) Page 5 N Channel Enchancement Mode MOSFET 2.5A ST2304 TYPICAL CHARACTERICTICS (25J Unless noted) Page 6 |
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